Basa resarufa hexafluoride musilicon nitride etching

Sulfur hexafluoride igasi ine yakanakisa insulating properties uye inowanzoshandiswa mu-high-voltage arc kudzimisa uye transformers, high-voltage transmission lines, transformers, etc. Zvisinei, kunze kwemabasa aya, sulfur hexafluoride inogonawo kushandiswa semagetsi etchant. . Electronic giredhi yakakwira-kuchena sulfur hexafluoride ndiyo yakanaka yemagetsi etchant, iyo inoshandiswa zvakanyanya mumunda weiyo microelectronics tekinoroji. Nhasi, Niu Ruide yakakosha gasi mupepeti Yueyue achasuma mashandisirwo esarufa hexafluoride musilicon nitride etching uye pesvedzero yemaparamita akasiyana.

Isu tinokurukura nezve SF6 plasma etching SiNx process, kusanganisira kushandura simba replasma, chiyero chegasi cheSF6 / Iye uye nekuwedzera iyo cationic gasi O2, tichikurukura nezve pesvedzero yayo pachiyero chekuisa cheSiNx element yekudzivirira layer yeTFT, uye kushandisa plasma radiation The spectrometer inoongorora kuchinja kwehutano hwemhando imwe neimwe muSF6 / He, SF6 / He / O2 plasma uye SF6 dissociation rate, uye inotsvaga hukama huri pakati pekuchinja kweSiNx etching rate uye plasma yemhando yemhando.

Zvidzidzo zvakawana kuti kana simba re plasma richiwedzerwa, chiyero che etching chinowedzera; kana chiyero chekuyerera kweSF6 mu plasma ichiwedzerwa, iyo F atomu concentration inowedzera uye yakanyatsobatanidzwa ne etching rate. Uye zvakare, mushure mekuwedzera iyo cationic gasi O2 pasi peiyo yakatarwa yakazara kuyerera mwero, ichava nemhedzisiro yekuwedzera etching mwero, asi pasi peakasiyana O2/SF6 flow ratios, pachava neakasiyana maitiro ekuita, ayo anogona kukamurwa kuita zvikamu zvitatu. : (1) The O2 / SF6 flow ratio ishoma kwazvo, O2 inogona kubatsira kuparadzaniswa kweSF6, uye etching rate panguva ino yakakura kudarika apo O2 isingawedzerwi. (2) Kana iyo O2 / SF6 kuyerera kweyero yakakura kupfuura 0.2 kusvika panguva inoswedera ku1, panguva ino, nekuda kwehuwandu hukuru hwekuparadzaniswa kweSF6 kuumba F maatomu, chiyero che etching ndicho chakanyanya; asi panguva imwecheteyo, maatomu eO ari muplasma ari kuwedzerawo uye Zviri nyore kuumba SiOx kana SiNxO(yx) neSiNx firimu pamusoro, uye kana O atomu dzichiwedzera, ndipo pakanyanya kuoma maatomu eF etching reaction. Nokudaro, chiyero che etching chinotanga kuderera apo chiyero cheO2 / SF6 chiri pedyo ne 1. (3) Kana chiyero cheO2 / SF6 chiri chikuru kudarika 1, chiyero che etching chinoderera. Nekuda kwekuwedzera kukuru kweO2, maatomu akapatsanurwa eF anodhumhana neO2 uye chimiro OF, izvo zvinoderedza kuwanda kwemaatomu eF, zvichikonzera kudzikira kweyero etching. Zvinogona kuonekwa kubva pane izvi kuti kana O2 yawedzerwa, kuyerera kweO2 / SF6 iri pakati pe0.2 ne0.8, uye yakanakisa etching rate inogona kuwanikwa.