Magasi akakoshazvakasiyana nezvakajairikamagasi emumaindasitiripakuti ane mashandisirwo akasiyana uye anoshandiswa munzvimbo dzakatarwa. Ane zvinodiwa chaizvo pakuchena, kusvibiswa, maumbirwo, uye hunhu hwemuviri nemakemikari. Kana tichienzanisa nemagasi emumaindasitiri, magasi akakosha akasiyana-siyana asi ane huwandu hudiki hwekugadzira uye hwekutengesa.

Iyomagasi akasanganiswauyemagasi ekuenzanisa akajairikaMagasi akasiyana-siyana atinowanzo shandisa ndiwo magasi akakosha egasi rakakosha. Magasi akasiyana-siyana anowanzo kamurwa kuita magasi akasiyana-siyana uye magasi akasiyana-siyana emagetsi.

Magasi akasanganiswa anosanganisira:gasi rakasanganiswa nelaser, gasi rakasanganiswa rekuona zvishandiso, kusveta gasi rakasanganiswa, kuchengetedza gasi rakasanganiswa, gasi rakasanganiswa remagetsi, tsvakurudzo yezvekurapa nehupenyu, gasi rakasanganiswa rekuuraya utachiona nekuuraya utachiona, gasi rakasanganiswa remagetsi, gasi rakasanganiswa remagetsi, gasi rakasanganiswa rine simba guru, uye mhepo isina simba.

Misanganiswa yemagetsi ine gasi inosanganisira epitaxial gas mixes, chemical vapor deposition gas mixes, doping gas mixes, etching gas mixes, uye mimwe electronic gas mixes. Iyi misanganiswa yegesi ine basa guru muindasitiri ye semiconductor ne microelectronics uye inoshandiswa zvakanyanya mukugadzira large-scale integrated circuit (LSI) uye very large-scale integrated circuit (VLSI), pamwe nekugadzira semiconductor devices.

Mhando 5 dzemagetsi akasanganiswa magasi ndidzo dzinonyanya kushandiswa

Kudhaya gasi rakasanganiswa nedopu

Mukugadzirwa kwemidziyo ye semiconductor uye macircuit akabatanidzwa, mamwe marara anoiswa mumidziyo ye semiconductor kuti ape conductivity uye resistivity inodiwa, zvichigonesa kugadzirwa kwe resistors, PN junctions, buried layers, nezvimwe zvinhu. Magasi anoshandiswa mukuita doping anonzi dopant gases. Magasi aya anosanganisira zvikuru arsine, phosphine, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride,boron trifluoride, uye diborane. Dopant source inowanzo sanganiswa ne carrier gas (yakadai se argon ne nitrogen) mukabati resource. Gasi rakasanganiswa rinozopinzwa mu diffusion oven uye rinotenderera rakatenderedza wafer, richiisa dopant pamusoro pe wafer. Dopant inobva yasangana ne silicon kuti igadzire dopant metal inotama ichipinda mu silicon.

Musanganiswa wegesi yekukura kweEpitaxial

Kukura kweEpitaxial inzira yekuisa nekukura chinhu chimwe chete chekristaro pamusoro pe substrate. Muindasitiri ye semiconductor, magasi anoshandiswa kukura chikamu chimwe chete kana kupfuura chezvinhu achishandisa chemical vapor deposition (CVD) pane substrate yakasarudzwa zvakanaka anonzi epitaxial gases. Magasi akajairika esilicon epitaxial anosanganisira dihydrogen dichlorosilane, silicon tetrachloride, uye silane. Anonyanya kushandiswa pakuisa epitaxial silicon deposition, polycrystalline silicon deposition, silicon oxide film deposition, silicon nitride film deposition, uye amorphous silicon film deposition yemasolar cells nezvimwe zvishandiso zvinonzwa chiedza.

Gasi rekuisa maIon

Mukugadzira michina ye semiconductor uye integrated circuit, magasi anoshandiswa mukuita kwekuisa maion anonzi ma ion implantation gases. Ma ionized disadvantages (akadai se boron, phosphorus, uye arsenic ions) anokurumidziswa kusvika padanho repamusoro resimba asati aiswa mu substrate. Tekinoroji yekuisa maion ndiyo inonyanya kushandiswa kudzora threshold voltage. Huwandu hwetsvina dzakaiswa hunogona kuonekwa nekuyera ion beam current. Ma ion implantation gases anowanzo sanganisira phosphorus, arsenic, uye boron gases.

Kucheka gasi rakasanganiswa

Kucheka inzira yekucheka pamusoro pechinhu chakagadziriswa (senge firimu resimbi, firimu resilicon oxide, nezvimwewo) pane chinhu chisina kuvharwa ne photoresist, ukuwo nzvimbo yacho ichichengetedzwa ne photoresist, kuitira kuti pave nemufananidzo unodiwa pamusoro pechinhu.

Musanganiswa weGasi reKuisa Utsi hweKemikari

Kuisa vapor muchina (CVD) kunoshandisa macompounds anonyungudika kuisa chinhu chimwe chete kana compound kuburikidza ne vapor-phase chemical reaction. Iyi inzira yekugadzira firimu inoshandisa vapor-phase chemical reactions. Magasi eCVD anoshandiswa anosiyana zvichienderana nerudzi rwefirimu riri kuumbwa.