Specialty magasisiyana nezvakawandamagasi emaindasitirimukuti vane mashandisirwo akasarudzika uye anoshandiswa mune chaiyo minda. Vane zvinodiwa chaizvo zvekuchena, kusvibiswa kwemukati, kuumbwa, uye zvemuviri nemakemikari zvimiro. Kuenzaniswa nemagasi emaindasitiri, magasi akasarudzika akasiyana zvakasiyana asi ane madiki ekugadzira uye mavhoriyamu ekutengesa.

Themagasi akasanganiswauyestandard calibration magasiisu tinowanzo shandisa zvakakosha zvikamu zveakakosha magasi. Magasi akasanganiswa anowanzo kupatsanurwa kuita magasi akasanganiswa akasanganiswa uye emagetsi akasanganiswa magasi.

General akasanganiswa magasi anosanganisira:laser yakasanganiswa gasi, instrument yekuona gasi rakasanganiswa, welding gasi rakasanganiswa, kuchengetedza gasi rakasanganiswa, chiedza chemagetsi chitubu chakasanganiswa gasi, tsvakurudzo yezvokurapa uye yebiological yakasanganiswa gasi, disinfection uye sterilization gasi rakasanganiswa, instrument alarm yakasanganiswa gasi, high-pressure yakasanganiswa gasi, uye zero-giredhi mweya.

Electronic gasi musanganiswa unosanganisira epitaxial gasi musanganiswa, kemikari vapor deposition gasi musanganiswa, doping gasi musanganiswa, etching gasi musanganiswa, uye mamwe emagetsi gasi musanganiswa. Iyi gasi musanganiswa inotora basa rinokosha mu semiconductor uye microelectronics maindasitiri uye anoshandiswa zvakanyanya muhombe-yakasanganiswa yedunhu (LSI) uye yakakura kwazvo-yakakura-yakasanganiswa yedunhu (VLSI) kugadzira, pamwe nekugadzira semiconductor mudziyo.

5 Mhando dzemagetsi akasanganiswa magasi ndiwo anonyanya kushandiswa

Doping yakasanganiswa gasi

Mukugadzirwa kwemidziyo yesemiconductor uye maseketi akabatanidzwa, kumwe kusvibiswa kunounzwa mune semiconductor zvinhu kuti zvipe inodiwa conductivity uye resistivity, zvichigonesa kugadzirwa kweanopikisa, PN junctions, akavigwa akafukidzwa, uye zvimwe zvinhu. Iwo magasi anoshandiswa mukuita doping anodaidzwa kuti dopant magasi. Aya magasi anonyanya kusanganisira arsine, phosphine, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride,boron trifluoride, uye diborane. Iyo dopant sosi inowanzosanganiswa neanotakura gasi (senge argon uye nitrogen) mune sosi kabati. Gasi rakasanganiswa rinobva raiswa jekiseni muchoto chinopararira uye rinotenderera richitenderedza wafer, richiisa dopant pamusoro pewafer pamusoro. Iyo dopant inobva yasangana nesilicon kuti igadzire dopant simbi inotamira musilicon.

Epitaxial kukura gasi musanganiswa

Epitaxial kukura ndiyo maitiro ekuisa uye kukura imwe chete crystal zvinhu pane substrate pamusoro. Muindasitiri yesemiconductor, magasi anoshandiswa kurima imwe kana akawanda akaturikidzana achishandisa kemikari vapor deposition (CVD) pane yakanyatsosarudzwa substrate inonzi epitaxial magasi. Yakajairika silicon epitaxial magasi anosanganisira dihydrogen dichlorosilane, silicon tetrachloride, uye silane. Iwo anonyanya kushandiswa epitaxial silicon deposition, polycrystalline silicon deposition, silicon oxide film deposition, silicon nitride film deposition, uye amorphous silicon firimu deposition yemasero ezuva uye mamwe mafotosensitive zvishandiso.

Ion implantation gasi

Mune semiconductor mudziyo uye yakasanganiswa yedunhu kugadzira, magasi anoshandiswa muiyo ion implantation process anoungana anonzi ion implantation magasi. Ionized tsvina (yakadai seboron, phosphorus, uye arsenic ions) inokwidziridzwa kusvika kune yakakwira simba mwero isati yaiswa musubstrate. Ion implantation tekinoroji inonyanya kushandiswa kudzora chikumbaridzo voltage. Kuwanda kwetsvina yakasimwa inogona kutariswa nekuyera iyo ion beam ikozvino. Ion implantation magasi anowanzo sanganisira phosphorus, arsenic, uye boron magasi.

Kupisa gasi rakasanganiswa

Etching inzira yekubvisa nzvimbo yakagadziriswa (senge simbi firimu, silicon oxide firimu, zvichingodaro) pane substrate isina kuvharwa nephotoresist, ichichengetedza nzvimbo yakafukidzwa nephotoresist, kuitira kuti uwane inodiwa yekufungidzira pateni pane substrate pamusoro.

Chemical Vapor Deposition Gasi Musanganiswa

Kemikari vapor deposition (CVD) inoshandisa mhepo inoputika kuisa chinhu chimwe chete kana musanganiswa kuburikidza nemhute-chikamu chemakemikari reaction. Iyi inzira yekugadzira firimu inoshandisa vapor-phase chemical reactions. Magasi eCVD anoshandiswa anosiyana zvichienderana nerudzi rwefirimu riri kuumbwa.